Design of a 5MHz Half-bridge Gate Driver for GaN HEMTs with Adaptive Output Current
نویسندگان
چکیده
In this paper, a half-bridge gate driver with adaptive output current for GaN HEMTs is introduced. The drive of the adapted to load HEMTs, by adjusting W/L size transistors. rise time achieved be basically constant adjustment different load, so noise can effectively immunized and working efficiency improved. Based on proposed circuit, designed implemented in 180nm BCD process. Tested results show has about 5ns under 5MHz CL 0.5nF, 2.0nF, 3.5nF respectively.
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2023
ISSN: ['1349-2543', '1349-9467']
DOI: https://doi.org/10.1587/elex.20.20230342